Detecting driving potentials at the buried SiO2 nanolayers in solar cells by chemical-selective nonlinear x-ray spectroscopy

We present an approach to selectively examine asymmetric potential in the buried layer of solar cell devices by means nonlinear x-ray spectroscopy. Detecting second harmonic generation signals while resonant SiO2 core level, we directly observe existence band bending effect nanolayer, heterostructures Al/LiF/SiO2/Si, TiO2/SiO2/Si, and Al2O3/SiO2/Si. The results demonstrate high sensitivity method that determines performance functional materials for photovoltaics or other optoelectronic devices.